Search results for "Polycrystalline silicon"
showing 5 items of 5 documents
Light absorption and electrical transport in Si:O alloys for photovoltaics
2010
Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was …
Memory effects in MOS capacitors with silicon rich oxide insulators
2000
ABSTRACTTo form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials wereannealed in N2 ambient at temperatures between 950 and 1100 °C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory function of such structures has been investigated in metal-oxidesemiconductor (MOS) capacitors with a SRO film sandwiched be…
Memory effects in MOS capacitors with silicon quantum dots
2001
To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory functions of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers …
Extracting parameters from semi-log plots of polycrystalline silicon PV modules outdoor I–V data: Double-exponential model revisited
2010
This paper presents a method for extracting physically meaningful parameters from measured I–V curves of PV modules. The 7-parameter double-exponential model is applied in the modeling. The method is based on linear fitting of semi-logarithmic plots. The paper demonstrates a new technique to estimate the series resistance of a module with high accuracy from such plots. As a result, also the reverse saturation current and the quality factor of the diffusion diode can be determined. The method is applied to outdoor I–V data from a test station with three similar, but not identical, polycrystalline-Si modules. The values of the series resistances found with this method deviate somewhat from th…
Surface Morphology of Single and Multi-Layer Silicon Nitride Dielectric Nano-Coatings on Silicon Dioxide and Polycrystalline Silicon
2019
Silicon nitride (Si3N4) in a form of single and multi-layer nanofilms is proposed to be used as a dielectric layer in nanocapacitors for operation in harsh environmental conditions. Characterization of surface morphology, roughness and chemical bonds of the Si3N4 coatings has an important role in production process as the surface morphology affects the contact surface with other components of the produced device. Si3N4 was synthesized by using low pressure chemical vapour deposition method and depositing single and multi-layer (3 – 5 layers) nanofilms on SiO2 and polycrystalline silicon (PolySi). The total thickness of the synthesized nanofilms was 20 – 60 nm. Surface morphology was investi…